journal article·2026

n-Type and p-type co-doping for optimizing turn-on and threshold fields of SiC towards enhanced field emission properties

Yongkai Sun, Lan Chen, Zhao Li, He Lv, Wenzhe Sun, Wenyao Li, Shiqi Ding, Zhenjiang Li

Journal of Materials Chemistry C· Volume 14· Issue 19
Publisher page

Abstract

Turn-on field ( E to ) and threshold electric field ( E thr ) are regarded as typical indexes for fabricating better field emission (FE) devices.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Carbon Nanotubes in Composites

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Qingdao Engineering Research Center for New Metallic Functional Materials, Characteristic Laboratory of Advanced Metal Functional Materials and Processing in Universities of Shandong, Qingdao Binhai University, Qingdao 266555, Shandong, China

College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China

Funding

Natural Science Foundation of Shandong Province · National Natural Science Foundation of China · Science and Technology Support Plan for Youth Innovation of Colleges and Universities of Shandong Province of China

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