First-principles high-throughput screening of ruthenium compounds for advanced interconnects
Source abstract
Abstract
High-throughput screening of Ru-based compounds identifies 61 promising candidates for next-generation interconnects. Selecting constituent elements adjacent to Ru in the periodic table effectively minimizes intrinsic transport degradation.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronics Engineering, Incheon National University, Yeonsu-gu, Incheon 22012, Republic of Korea
Major in Advanced Materials and Semiconductor Engineering, Hanyang University, Ansan-si, Gyeonggi-do 15588, South Korea
Research Institute for Engineering and Technology, Incheon National University, Yeonsu-gu, Incheon 22012, Republic of Korea
Funding
Ministry of Trade, Industry and Energy
References (88)
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