Enhanced functional properties of ABC-type atomic layer deposited Ru thin films for advanced Cu alternative nanoscale interconnects
Source abstract
Abstract
An- ABC-type Ru ALD process with NH 3 addition at 310 °C enhanced Ru thin films: ∼100% step coverage, 1.2 nm roughness, 12.3 g cm −3 density, 13.4 µΩ cm resistivity and 0.3 at% impurities enabling high-quality Ru interconnects.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan 44919, Republic of Korea
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan 44919, Republic of Korea
Department of Chemical Engineering, Hongik University, Mapo-gu, Seoul, 04066, Republic of Korea
Korea Basic Science Institute (KBSI) 618-230, Gangseo-gu, Busan 46742, Republic of Korea
R&D Center, CTH Corporation, Daegu, 43018, Republic of Korea
Advanced Materials and Semiconductor Engineering, Materials Science and Chemical Engineering, Hanyang University, Ansan-si, Gyeonggi-do 15588, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy
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