Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO 2 films for dynamic random-access memory capacitors
Source abstract
Abstract
Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO 2 films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al. , J. Mater. Chem. C , 2025, 13 , 16969–16980, https://doi.org/10.1039/D5TC01401H.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
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Affiliations
Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
Department of Chemical and Biological Engineering, Sookmyung Women's University, Seoul, 04310, Republic of Korea
Funding
National Research Foundation of Korea
References
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