High-performance electrode-controlled MoTe 2 memristor for dual-mode synaptic plasticity in neuromorphic systems
Source abstract
Abstract
A bottom-embedded electrode MoTe 2 memtransistor suppresses Fermi-level pinning, emulates homosynaptic/heterosynaptic plasticity via H 2 O/O 2 adsorption, and enables 90.32% MNIST recognition accuracy for neuromorphic systems.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuits, Jiangnan University, Wuxi 214401, China
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
Nanjing Tech University Pujiang Institute, Nanjing 211200, China
School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Natural Science Foundation of Jiangxi Province
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