An ovonic threshold switch selector with ultralow threshold voltage drift coefficient for cross-point memory applications
Source abstract
Abstract
Breakthrough zero-drift OTS selector: unveiling the atomic-level mechanism of threshold voltage drift suppression in In 5 Te 9 As 30 Se 56 , providing a key solution for high-density 3D memory.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Institute of Engineering Electronics China Academy of Engineering Physics, Mianyang 621999, China
Department of Physics, Graduate School of Science and Technology, Gunma University, Maebashi 3718510, Japan
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Chinese Academy of Sciences
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