Symmetric transport in sub-5-nm monolayer Sn 2 S 2 -based homogeneous CMOS devices
Source abstract
Abstract
Sub-5 nm homogeneous CMOS devices with ultra-high on-state current and pronounced n/p symmetry are achieved using a Sn 2 S 2 monolayer.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: 2D Materials and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
College of Science, Jinling Institute of Technology, Nanjing 211169, China
Suzhou Laboratory, Suzhou 215000, China
Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Nanjing University of Posts and Telecommunications
References (76)
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