Alleviating trade-off between dark current and sensitivity of β-Ga 2 O 3 X ray detectors via defect engineering
Source abstract
Abstract
In this study, air annealing was employed to achieve simultaneous modulation of both V o and V Ga defects in β-Ga 2 O 3 single crystals. The fabricated detector demonstrates outstanding comprehensive performance and successfully realizes object imaging.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, China
Funding
Natural Science Foundation of Shandong Province · National Key Research and Development Program of China · National Natural Science Foundation of China · Shenzhen Municipal Fundamental Research Program · Key Technology Research and Development Program of Shandong Province
References (46)
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