Impact of pulse operation conditions on the transient temperature distribution of GaN HEMTs via Raman thermometry operando analysis

Abstract

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Advanced Power Amplifier Design

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Affiliations

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China

Beijing Microelectronics Technology Institute, Beijing 100076, China

Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China

Funding

National Natural Science Foundation of China · Key Science and Technology Program of Shaanxi Province

References (63)