Correction: The leakage current suppression mechanism in a RuO 2 /SrTiO 3 /Ru capacitor induced by introduction of an ultra-thin GeO 2 interfacial layer at the bottom interface
Source abstract
Abstract
Correction for ‘The leakage current suppression mechanism in a RuO 2 /SrTiO 3 /Ru capacitor induced by introduction of an ultra-thin GeO 2 interfacial layer at the bottom interface’ by Heewon Paik et al. , J. Mater. Chem. C , 2025, https://doi.org/10.1039/d5tc02736e.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices · Dielectric materials and actuators
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Affiliations
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea
Department of Chemical and Biological Engineering, Sookmyung Women's University, Seoul, 04310, Republic of Korea
Funding
National Research Foundation of Korea
References
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