journal article·2025

Plasma-enhanced ALD growth of ε-(Al x Ga 1− x ) 2 O 3 alloy films with high Al content and tunable band offsets

Jinteng Zhang, Xiaohong Zeng, Liang Yu, Shuhao Zhang, Quan Miao, Zicheng Xing, Zhiyun Li, Nan Hu, Rong Huang, Yang Shen, Yecheng Ding, Zhitai Jia, Ying Wu, Sunan Ding

Journal of Materials Chemistry C· Volume 13· Issue 48
Publisher page

Abstract

The low-temperature PEALD approach results in high-Al-content ε-(Al x Ga 1− x ) 2 O 3 films with high crystallinity, a tunable bandgap, and large conduction band offsets, suitable for polarization-engineered electronics.
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Research context

OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Crystal Materials, Institute of novel semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China

School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 215163, China

Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, 215123, Suzhou, China

Shandong Research Institute of Industrial Technology, Jinan, Shandong, 250100, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Science and Technology Planning Project of Shenzen Municipality

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