Fluoride-target-assisted growth of Pb 2 OF 2 oxyfluoride films with anion ordering and high dielectric constant
Source abstract
Abstract
Fabrication methods for mixed anion compounds are presented through the synthesis of lead oxyfluoride films. The work shows that controlling substrate temperature enables oriented growth, which enhances the material's dielectric constant.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Silicone and Siloxane Chemistry
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
Department of Chemistry, Faculty of Science, Ochanomizu University, 2-1-1 Otsuka, Bunkyo-ku, Tokyo 112-8610, Japan
Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
Funding
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D · Precursory Research for Embryonic Science and Technology
References (22)
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