Stable partial dislocation complexes in GaN investigated by molecular dynamics and first-principles simulations
Source abstract
Abstract
Formation of stable partial dislocation complexes in GaN is shown via molecular dynamics simulations. These complexes introduce energy levels in the band gap and may be considered for modifying the charge carrier lifetime for THz device applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv, 4-g Hlushkova Avenue, 03022 Kyiv, Ukraine
National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, 37 Beresteiskyi Avenue, 03056 Kyiv, Ukraine
University of Rome “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Rome, Italy
Funding
Ministero dell'Università e della Ricerca · Alexander von Humboldt-Stiftung
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