journal article·2025

Highly enhanced thermoelectric performance of halogen element modified SnSe 2 materials via point defect engineering

Rong Li, Chong-Yu Wang, Qiu-Yu Luo, Ze Li, Xing Yang, Wang-Qi Bao, Yi-Xin Zhang, Jing Feng, Zhen-Hua Ge

Journal of Materials Chemistry C· Volume 13· Issue 32
Publisher page

Abstract

In this study, bulk SnSe 2 samples singly doped with halogen elements were synthesized, and the Cl-doped SnSe 2 exhibited the most TE performance. The engineering of point defects through halogen doping proves effective in enhancing TE performance.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China

National-Local Joint Engineering Research Center for Technology of Advanced Metallic Solidification Forming and Equipment, Kunming 650093, China

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