journal article·2025

Amorphous Ta 2 O 5 memristor with excellent self-selective and artificial synaptic properties for artificial neural networks

Bumjoo Kim, Geun-Soo Lee, San Kwak, Byeong-Jae Min, Boo-Hyun Choi, Hyun-Ju Choi, Jichai Jeong, Sahn Nahm

Journal of Materials Chemistry C· Volume 13· Issue 24
Publisher page

Abstract

The Pt/ATO/IATO/TS memristor shows self-selective properties with large nonlinearity, a large s ratio, and good reliability. This memristor also exhibits synaptic properties; thus, it can be used for artificial neural networks.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Korea University, 145 Anam-ro Seongbuk-gu, Seoul 02841, Republic of Korea

Department of Brain and Cognitive Engineering, Korea University, 145 Anam-ro Seongbuk-gu, Seoul 02841, South Korea

Funding

Ministry of Trade, Industry and Energy

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