Correction: An ion-gating synaptic memristor based on tri-layer HfO x composition regulation
Source abstract
Abstract
Correction for ‘An ion-gating synaptic memristor based on tri-layer HfO x composition regulation’ by Lanqing Zou et al. , J. Mater. Chem. C , 2025, 13 , 5326–5331, https://doi.org/10.1039/D4TC04564E.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Electrochemical Analysis and Applications · CCD and CMOS Imaging Sensors
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Affiliations
School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Hubei Engineering Research Center on Microelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Hubei Yangtze Memory Laboratories, Wuhan 430205, China
Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan, 430205, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
References
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