High-performance bifunctional near-infrared diode enabled by intentional manipulation of energy transfer and carrier injection with a hetero-active-layer
Source abstract
Abstract
A hetero-diode based on FAPbI 3 /CdSe QDs is developed, and the QDs exhibit efficient FRET to FAPbI 3 . The hole injection barrier, due to the deeper valence band of the QDs, regulates the number of holes, resulting in more balanced carrier injection.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
School of Microelectronics, Shenzhen Institute of Information Technology, Shenzhen 518172, People's Republic of China
Funding
Science, Technology and Innovation Commission of Shenzhen Municipality
References (24)
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