journal article·2025Open access

Novel layered As 2 Ge with a pentagonal structure for potential thermoelectrics

Zhengjin Gao, Minghao Lv, Manman Liu, Changzhi Gu, Geng Li, Baoli Liu, David J. Singh, Weitao Zheng, Xiaofeng Fan

Journal of Materials Chemistry C· Volume 13· Issue 11

Abstract

We predicted the high thermoelectric properties of As 2 Ge monolayers, and the maximum ZT of n-type doping is 4.36.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Automobile Materials (Jilin University), Ministry of Education, and College of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

CAS Key Laboratory of Vacuum Physics, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA

Funding

Natural Science Foundation of Jilin Province · National Key Research and Development Program of China

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