journal article·2024

End-to-end edge detection on self-rectifying resistive memory array

Shurong Pan, Wenhan Liu, Hao Wang, Qijun Huang, Jin He, Ruiqing Cheng, Sheng Chang

Journal of Materials Chemistry C· Volume 12· Issue 47
Publisher page

Abstract

We fabricate the Cu 2 Te memristor with self-rectifying characteristics, and explore its application in edge detection, which is realized in a single step manner by a new Gauss–Laplace operator in a circuit with the memristor array.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Advanced Memory and Neural Computing · CCD and CMOS Imaging Sensors · Neural Networks and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China

School of Information and Software Engineering, East China Jiaotong University, Nanchang 330013, China

School of Microelectronics, Wuhan University, Wuhan 430072, China

Funding

National Natural Science Foundation of China

References (44)

Show source-provided references
1. D. R.Waghule and R. S.Ochawar , 2014 International Conference on Electronic Systems, Signal Processing and Computing Technologies, 2014 , pp. 151155
2. P.Arbelaez , J.Pont-Tuset , J. T.Barron , F.Marques and J.Malik , Proceedings of the IEEE Conference on Computer Vision and Pattern Recognition (CVPR), 2014 , pp. 328335
3. Ferrari · IEEE Trans. Pattern Anal. Mach. Intell. · 2008 · 30 · 3610.1109/TPAMI.2007.1144 ↗
4. Zhang · IEEE Trans. Pattern Anal. Mach. Intell. · 2018 · 40 · 120910.1109/TPAMI.2017.2707492 ↗
5. Y.Liu , M.-M.Cheng , X.Hu , K.Wang and X.Bai , Proceedings of the IEEE conference on Computer Vision and Pattern Recognition (CVPR), 2017 , pp. 30003009
6. Zidan · Nat. Electron. · 2018 · 1 · 2210.1038/s41928-017-0006-8 ↗
7. Zhang · Nat. Electron. · 2020 · 3 · 37110.1038/s41928-020-0435-7 ↗
8. Zhao · Tsinghua Sci. Technol. · 2022 · 27 · 45510.26599/TST.2021.9010043 ↗
9. Pan · Microelectron. Eng. · 2022 · 251 · 11166810.1016/j.mee.2021.111668 ↗
10. Pan · Sci. China: Phys., Mech. Astron. · 2023 · 66 · 276811
11. Zhu · IEEE Electron Device Lett. · 2017 · 38 · 136710.1109/LED.2017.2736006 ↗
12. Zhu · IEEE Access · 2019 · 7 · 4747210.1109/ACCESS.2019.2909295 ↗
13. Tang · IEEE Trans. Cognit. Dev. Syst. · 2020 · 13 · 64510.1109/TCDS.2020.3003377 ↗
14. Zhu · IEEE Trans. Electron Devices · 2020 · 68 · 60210.1109/TED.2020.3045684 ↗
15. Li · Adv. Mater. · 2022 · 34 · 220148810.1002/adma.202201488 ↗
16. Lin · Nat. Electron. · 2020 · 3 · 22510.1038/s41928-020-0397-9 ↗
17. Zhong · Nat. Electron. · 2022 · 5 · 67210.1038/s41928-022-00838-3 ↗
18. Yin · Adv. Mater. · 2021 · 33 · 200708110.1002/adma.202007081 ↗
19. Mullani · Adv. Funct. Mater. · 2023 · 230034310.1002/adfm.202300343 ↗
20. Ling · Adv. Funct. Mater. · 2023 · 33 · 220832010.1002/adfm.202208320 ↗
21. Cao · Adv. Funct. Mater. · 2021 · 31 · 200544310.1002/adfm.202005443 ↗
22. Cai · Nat. Electron. · 2019 · 2 · 29010.1038/s41928-019-0270-x ↗
23. Sebastian · Nat. Commun. · 2022 · 13 · 613910.1038/s41467-022-33699-7 ↗
24. Xiang · Nat. Commun. · 2018 · 9 · 296610.1038/s41467-018-05397-w ↗
25. Yao · Nature · 2020 · 577 · 64110.1038/s41586-020-1942-4 ↗
26. Gao · IEEE Electron Device Lett. · 2016 · 37 · 87010.1109/LED.2016.2573140 ↗
27. Kwak · IEEE Trans. Electron Devices · 2018 · 65 · 471610.1109/TED.2018.2862139 ↗
28. Tang · Neurocomputing · 2020 · 403 · 8010.1016/j.neucom.2020.04.012 ↗
29. Yu · Neural Process. Lett. · 2020 · 51 · 189110.1007/s11063-019-10179-6 ↗
30. Tian · IEEE Trans. Electron Devices · 2022 · 69 · 604310.1109/TED.2022.3204525 ↗
31. Ren · Adv. Mater. · 2024 · 36 · 230721810.1002/adma.202307218 ↗
32. Zhang · Nano Lett. · 2023 · 23 · 310710.1021/acs.nanolett.2c03624 ↗
33. Arbeláez · IEEE Trans. Pattern Anal. Mach. Intell. · 2011 · 33 · 89810.1109/TPAMI.2010.161 ↗
34. Yin · Adv. Mater. · 2023 · 35 · 230685010.1002/adma.202306850 ↗
35. Torrie · Solid State Commun. · 1970 · 8 · 189910.1016/0038-1098(70)90343-1 ↗
36. Feng · ACS Nano · 2021 · 15 · 341510.1021/acsnano.0c10442 ↗
37. Shetty · Matter · 2020 · 3 · 124610.1016/j.matt.2020.07.028 ↗
38. Guan · Appl. Phys. Rev. · 2020 · 7 · 3140110.1063/5.0009713 ↗
39. Xiao · Appl. Phys. Rev. · 2020 · 7 · 3130110.1063/1.5143815 ↗
40. Gamadia · IEEE Trans. Consum. Electron. · 2007 · 53 · 24910.1109/TCE.2007.381682 ↗
41. Martin · IEEE Trans. Pattern Anal. Mach. Intell. · 2004 · 26 · 53010.1109/TPAMI.2004.1273918 ↗
42. Milano · Nat. Mater. · 2022 · 21 · 19510.1038/s41563-021-01099-9 ↗
43. J.Yu , Y.Li , W.Sun , W.Zhang , Z.Gao , D.Dong , Z.Yu , Y.Zhao , J.Lai , Q.Ding , Q.Luo , C.Dou , Q.Zuo , Y.Zhao , S.Chen , R.Zou , H.Chen , Q.Wang , H.Lv , X.Xu , D.Shang and M.Liu , 2021 Symposium on VLSI Technology, 2021 , pp. 12
44. Wang · IEEE Signal Process. Mag. · 2009 · 26 · 9810.1109/MSP.2008.930649 ↗