Current-in-plane tunneling measurement of oxygen-functionalized few-layer boron nitride lateral barriers
Source abstract
Abstract
A surface tunneling current measurement was used to study the electronic performance of hexagonal boron nitride (hBN) and surface-functionalized hBN in a variety of configurations and conditions.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran 15875-4413, Iran
School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea
Department of Aerospace Engineering, University of Michigan, Ann Arbor, MI 48109, USA
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, South Korea
Funding
Amirkabir University of Technology
References (47)
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