Correction: Electrical characteristics and photodetection mechanism of TiO 2 /AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
Abstract
Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates
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Affiliations
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road 35A, 100083, Beijing, China
College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
School of Integrated Circuits, Tsinghua University, 100084, Beijing, China
Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands
Funding
Key Technologies Research and Development Program
References
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