Correction: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol
Source abstract
Abstract
Correction for ‘High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol’ by M. Bezuidenhout et al. , J. Mater. Chem. C , 2015, 3 , 7455–7462.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Life Sciences
and Materials and Surface Science Institute
University of Limerick
Limerick
Ireland
Materials and Surface Science Institute and Department of Chemical and Environmental Sciences
References
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