DataVXJournal of Materials Chemistry CPaper
journal article·2018Open access

Correction: Electronic and transport properties of Li-doped NiO epitaxial thin films

J. Y. Zhang, W. W. Li, R. L. Z. Hoye, J. L. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. J. Wahila, L. F. J. Piper, T.-L. Lee, H. J. Edwards, V. R. Dhanak, K. H. L. Zhang

Journal of Materials Chemistry C· Volume 6· Issue 15
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Source abstract

Abstract

Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al. , J. Mater. Chem. C , 2018, 6 , 2275–2282.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Ga2O3 and related materials · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors

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Affiliations

Department of Chemical and Biochemical Engineering

College of Chemistry and Chemical Engineering

Xiamen University

Xiamen 361005

P. R. China

Department of Materials Science & Metallurgy

University of Cambridge

Cambridge

UK

Paul-Drude-Institut für Festkörperelektronik

Hausvogteiplatz 5-7

DE-10117 Berlin

Germany

Physical Sciences Division

Physical & Computational Sciences Directorate

Pacific Northwest National Laboratory

Richland

USA

Materials Science & Engineering

Binghamton University

Binghamton

Diamond Light Source Ltd.

Harwell Science and Innovation Campus

Didcot

Department of Physics

References

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