絶縁体厚さの最適化とAgナノワイヤの表面プラズモンを導入することによるp GaN/i Al‐2O_3/n‐ZnOヘテロ接合LEDからの増強された近紫外エレクトロルミネセンス【Powered by NICT】

article·2017-01-01

Yang Liu, Weizhen Liu, Xu Haiyang, Jiangang Ma, Cen Zhang, Chunyang Liu, Wang Zhongqiang, Yichun Liu

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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Thermal Expansion and Ionic Conductivity

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