Correction: Epitaxial growth of GaN films on unconventional oxide substrates
Source abstract
Abstract
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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References
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