DataVXJournal of Materials Chemistry CPaper
journal article·2022Open access

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility

Congcong Ma, Zhengyuan Wu, Zhuoxun Jiang, Ying Chen, Wei Ruan, Hao Zhang, Heyuan Zhu, Guoqi Zhang, Junyong Kang, Tong-Yi Zhang, Junhao Chu, Zhilai Fang

Journal of Materials Chemistry C· Volume 10· Issue 19
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Source abstract

Abstract

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga 2 O 3 with high hole mobility’ by Congcong Ma et al. , J. Mater. Chem. C , 2022, DOI: https://doi.org/10.1039/d1tc05324h.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques

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Affiliations

School of Information Science and Technology, and Academy for Engineering and Technology, Fudan University, Shanghai 200433, China

Institute of Optoelectronics, Fudan University, Shanghai 200433, China

Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China

Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China

Materials Genome Institute, Shanghai University, 333 Nanchen Road, Shanghai 200444, China

Funding

China Postdoctoral Science Foundation · National Natural Science Foundation of China · Natural Science Foundation of Shanghai · National Postdoctoral Program for Innovative Talents

References

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