DataVXJournal of Materials Chemistry CPaper
journal article·2015Open access

Correction: The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

Afzaal Qamar, Hoang-Phuong Phan, Jisheng Han, Philip Tanner, Toan Dinh, Li Wang, Sima Dimitrijev, Dzung Viet Dao

Journal of Materials Chemistry C· Volume 3· Issue 37
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Source abstract

Abstract

Correction for ‘The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices’ by Afzaal Qamar et al. , J. Mater. Chem. C , 2015, 3 , 8804–8809.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Aluminum Alloys Composites Properties · Semiconductor materials and devices

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Affiliations

Queensland Micro- and Nanotechnology Centre

Griffith University

Queensland

Australia

School of Engineering

References (1)

Show source-provided references
1. Qamar · IEEE Electron Device Lett. · 2015 · 36 · 70810.1109/LED.2015.2435153 ↗