Correction: High-pressure structural phase transition and metallization in Ga 2 S 3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa
Source abstract
Abstract
Correction for ‘High-pressure structural phase transition and metallization in Ga 2 S 3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa’ by Linfei Yang et al. , J. Mater. Chem. C , 2021, 9 , 2912–2918, DOI: 10.1039/d0tc06004f.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Machine Learning in Materials Science
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Affiliations
Key Laboratory of High-Temperature and High-Pressure Study of the Earth's Interior
Institute of Geochemistry
Chinese Academy of Sciences
Guiyang
China
State Key Laboratory of Structural Chemistry
Fujian Institute of Research on the Structure of Matter
Fuzhou
References
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