DataVXJournal of Materials Chemistry CPaper
journal article·2021Open access

Correction: Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations

Xiao Tang, Kuang-Hui Li, Che-Hao Liao, Dongxing Zheng, Chen Liu, Rongyu Lin, Na Xiao, Shibin Krishna, Jose Tauboada, Xiaohang Li

Journal of Materials Chemistry C· Volume 9· Issue 48
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Source abstract

Abstract

Correction for ‘Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations’ by Xiao Tang et al. , J. Mater. Chem. C , 2021, 9 , 15868–15876, DOI: 10.1039/D1TC02852A.
Only a short abstract or summary was supplied by the source.
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Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques

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Affiliations

Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

References

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