DataVXJournal of Materials Chemistry CPaper
journal article·2019Open access

Correction: Interface-engineered reliable HfO 2 -based RRAM for synaptic simulation

Qiang Wang, Gang Niu, Sourav Roy, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Wei Bai, Peng Shi, Sannian Song, Zhitang Song, Ya-Hong Xie, Zuo-Guang Ye, Christian Wenger, Xiangjian Meng, Wei Ren

Journal of Materials Chemistry C· Volume 7· Issue 42
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Source abstract

Abstract

Correction for ‘Interface-engineered reliable HfO 2 -based RRAM for synaptic simulation’ by Qiang Wang et al. , J. Mater. Chem. C , 2019, DOI: 10.1039/c9tc04880d.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Machine Learning and ELM

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electronic Materials Research Laboratory

Key Laboratory of the Ministry of Education & International Center for Dielectric Research

School of Electronic Science and Engineering

Xi’an Jiaotong University

Xi’an 710049

State Key Laboratory of Functional Materials for Informatics

Shanghai Institute of Microsystem and Information Technology

Chinese Academy of Sciences

Shanghai 200050

China

Department of Materials Science and Engineering

University of California

Los Angeles

USA

Department of Chemistry and 4D LABS

Simon Fraser University

Burnaby

Canada

IHP-Leibniz-Institut für innovative Mikroelektronik

15236 Frankfurt (Oder)

Germany

National Laboratory for Infrared Physics

Shanghai Institute of Technical Physics

Shanghai

References

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