Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga 2 O 3 thin films by RF magnetron sputtering
Source abstract
Abstract
Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga 2 O 3 thin films by RF magnetron sputtering’ by Shun Han et al. , J. Mater. Chem. C , 2019, 7 , 11834–11844.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenzhen Key Laboratory of Special Functional Materials
Shenzhen Engineering Laboratory for Advanced Technology of Ceramics
Guangdong Research Center for Interfacial Engineering of Functional Materials
College of Materials Science and Engineering
Shenzhen University
Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI)
The University of Hong Kong
China
References
Reference metadata was not supplied for this record.