Piezo-phototronic effect modulated performances of guest-substrate integrated p–i–n GaN ultraviolet detectors
Source abstract
Abstract
High quality freestanding p–i–n GaN UV photodiodes were successfully fabricated on flexible mica by using selective electrochemical (EC) etching and an In–Au (50 nm/50 nm) bonding layer, which is convenient and the thermal damage is low.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Guangdong Zhongshan Supervision Testing Institute of Quality & Metrology, Zhongshan City, Guangdong Province, China
Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China
Funding
Basic and Applied Basic Research Foundation of Guangdong Province · National Natural Science Foundation of China · National Key Research and Development Program of China
References (41)
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