Polarity and threading dislocation dependence of the surface morphology of c -GaN films exposed to HCl vapor
Source abstract
Abstract
HCl-vapor etching can provide another degree of freedom in polarity-sensitive etching because TD-free N-polar GaN is inert to HCl vapor.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Research Institute for Basic Sciences
Kyung Hee University
Seoul
Korea
Funding
National Research Foundation of Korea
References (16)
Show source-provided references
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