journal article·2016

Engineered design and fabrication of long lifetime multifunctional devices based on electrically conductive diamond ultrananowire multifinger integrated cathodes

Adhimoorthy Saravanan, Bohr-Ran Huang, Divinah Manoharan, Deepa Kathiravan, I.-Nan Lin

Journal of Materials Chemistry C· Volume 4· Issue 41
Publisher page

Abstract

Multi-functional vacuum electron field emission ( V EFE ) devices were developed using a laterally arranged multi-finger configuration with negative biased ultrananocrystalline-diamond graphite (N BG -UNDG) cathode/anode materials.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Carbon Nanotubes in Composites · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer Engineering

National Taiwan University of Science and Technology

Taipei 106

Republic of China

Department of Physics

Tamkang University

Tamsui 251

References (60)

Show source-provided references
1. Wu · Adv. Funct. Mater. · 2015 · 25 · 597210.1002/adfm.201502034 ↗
2. Hsu · Appl. Phys. Lett. · 2013 · 102 · 20310510.1063/1.4807128 ↗
3. Subramanian · Diamond Relat. Mater. · 2007 · 16 · 140810.1016/j.diamond.2007.01.037 ↗
4. Oro · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 1993 · 11 · 46410.1116/1.586841 ↗
5. Kang · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 1998 · 16 · 24210.1116/1.589788 ↗
6. H. F. Gray , G. J.Campisi and R. F.Greene, Proc. IEDM 86, Los Angeles, CA, 1996, 986
7. Li · J. Vac. Sci. Technol., B: Microelectron. Nanometer-Struct.–Process., Meas., Phenom. · 1994 · 12 · 67610.1116/1.587368 ↗
8. C. A. Spindt , C. E.Holland and R. D.Stowell, Proc. 29th International Field Emission Symposium, 1982, 119
9. Djubua · IEEE Trans. Electron Devices · 1991 · 38 · 231410.1109/16.88516 ↗
10. Geis · Nature · 1998 · 393 · 43110.1038/30900 ↗
11. Kang · J. Vac. Sci. Technol. · 2001 · 19 · 93610.1116/1.1368667 ↗
12. Subramanian · Appl. Phys. Lett. · 2008 · 93 · 20351110.1063/1.3036008 ↗
13. Lee · Nanotechnology · 2003 · 14 · 92
14. Kang · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 2003 · 21 · 59310.1116/1.1516187 ↗
15. Kanemaru · IEEE Trans. Electron Devices · 1991 · 38 · 233410.1109/16.88521 ↗
16. Li · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 1994 · 12 · 67610.1116/1.587368 ↗
17. Lee · IEEE Electron Device Lett. · 2004 · 25 · 60510.1109/LED.2004.833376 ↗
18. Lim · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 1999 · 17 · 63510.1116/1.591079 ↗
19. Wisitsora · J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom. · 2003 · 1 · 21
20. Kang · IEEE Trans. Nucl. Sci. · 2007 · 54 · 106110.1109/TNS.2007.892117 ↗
21. Subramanian · Diamond Relat. Mater. · 2005 · 14 · 209910.1016/j.diamond.2005.08.068 ↗
22. Bhattacharyya · Appl. Phys. Lett. · 2001 · 79 · 144110.1063/1.1400761 ↗
23. Arenal · Phys. Rev. B: Condens. Matter Mater. Phys. · 2007 · 75 · 19543110.1103/PhysRevB.75.195431 ↗
24. Sankaran · J. Phys. D: Appl. Phys. · 2012 · 45 · 36530310.1088/0022-3727/45/36/365303 ↗
25. Saravanan · ACS Appl. Mater. Interfaces · 2015 · 6 · 1056610.1021/am502231d ↗
26. Chang · J. Phys. Chem. C · 2012 · 116 · 1986710.1021/jp306086b ↗
27. Fowler · Proc. R. Soc. London, Ser. A · 1928 · 119 · 17310.1098/rspa.1928.0091 ↗
28. Kuzmany · Carbon · 2004 · 42 · 91110.1016/j.carbon.2003.12.045 ↗
29. Ferrari · Phys. Rev. B: Condens. Matter Mater. Phys. · 2001 · 63 · 12140510.1103/PhysRevB.63.121405 ↗
30. Pan · Appl. Surf. Sci. · 2008 · 254 · 378710.1016/j.apsusc.2007.12.002 ↗
31. Kuznetzov · Carbon · 2010 · 48 · 4110.1016/j.carbon.2009.08.009 ↗
32. Li · Sci. Rep. · 2016 · 6 · 2117110.1038/srep21171 ↗
33. Chang · RSC Adv. · 2015 · 5 · 292810.1039/C4RA13363C ↗
34. Chu · J. Appl. Phys. · 2012 · 112 · 12430710.1063/1.4769861 ↗
35. Chang · Nanoscale · 2013 · 5 · 746710.1039/c3nr01992f ↗
36. Xiao · Diamond Relat. Mater. · 2006 · 15 · 24410.1016/j.diamond.2005.07.013 ↗
37. Li · IEEE Trans. Electron Devices · 2013 · 9 · 60
38. Wu · Adv. Mater. · 2009 · 21 · 175610.1002/adma.200802560 ↗
39. Wong · Diamond Relat. Mater. · 2006 · 15 · 185910.1016/j.diamond.2006.09.021 ↗
40. Subramanian · Diamond Relat. Mater. · 2007 · 16 · 199710.1016/j.diamond.2007.07.009 ↗
41. Ghosh · Diamond Relat. Mater. · 2012 · 23 · 12010.1016/j.diamond.2012.01.030 ↗
42. Laroussi · IEEE Trans. Plasma Sci. · 1998 · 28 · 18410.1109/27.842899 ↗
43. Stoffels · Plasma Sources Sci. Technol. · 2002 · 11 · 38310.1088/0963-0252/11/4/304 ↗
44. Kunuku · RSC Adv. · 2014 · 4 · 4786510.1039/C4RA08296F ↗
45. Sang · Sensors · 2013 · 102 · 061604
46. Law · Appl. Phys. Lett. · 2006 · 88 · 13311410.1063/1.2190459 ↗
47. M. A. Lieberman and A. J.Lichtenberg, Principle of Plasma Discharges and Materials Processing, John Wiley & Sons, Hoboken, NJ, 2nd edn, 200510.1002/0471724254 ↗
48. He · ACS Nano · 2013 · 7 · 727110.1021/nn402679u ↗
49. Zhang · Nat. Commun. · 2013 · 4 · 181110.1038/ncomms2830 ↗
50. Gan · Nat. Photonics · 2013 · 4 · 253
51. Zhou · J. Micromech. Microeng. · 2016 · 26 · 07500310.1088/0960-1317/26/7/075003 ↗
52. Tian · Chem. Commun. · 2013 · 49 · 373910.1039/c3cc39273b ↗
53. Gupta · J. Mater. Sci. Technol. · 2010 · 26 · 22310.1016/S1005-0302(10)60037-0 ↗
54. Liu · J. Mater. Chem. C · 2016 · 4 · 617610.1039/C6TC00887A ↗
55. Teraji · Diamond Relat. Mater. · 2004 · 13 · 85810.1016/j.diamond.2004.01.031 ↗
56. Lin · J. Electrochem. Soc. · 2013 · 160 · H50910.1149/2.008309jes ↗
57. Liu · Sci. Rep. · 2015 · 10 · 1038
58. Ye · J. Appl. Phys. · 2003 · 12 · 94
59. Ye · Phys. Status Solidi A · 2002 · 3 · 193
60. Sankaran · Nanoscale · 2015 · 7 · 437710.1039/C4NR07030E ↗