Elimination of space charge effects in passivation films: the key to substantially enhancing the dielectric properties of tantalum oxide films
Source abstract
Abstract
This study reveals for the first time the influence mechanism of the dual-layer structure in the native passivation film on the dielectric breakdown of Ta 2 O 5 , providing critical insights for enhancing the reliability of tantalum capacitors.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
JSNU-SPbPU Institute of Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China
School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China
Funding
National Key Research and Development Program of China
References (31)
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