Benzylphosphonic acid treated ultra-thin ALD-InO x for long term device stability
Source abstract
Abstract
This paper demonstrates the long-term stability of V th in ultra-thin In 2 O 3 TFTs fabricated by ALD and modified with BPA SAMs. This creates a hydrophobic surface with low surface energy, enhancing stability and preventing O 2 and H 2 O adsorption.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea
Advanced Device Technology, ICT, University of Science and Technology (UST), Daejeon 34113, Republic of Korea
Advance Analysis & Data Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Department of Physics and van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
Funding
National Research Foundation of Korea
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