Enhancement of heat dissipation in β-Ga 2 O 3 Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations
Source abstract
Abstract
Cu-filled thermal through-vias were formed in β-Ga 2 O 3 Schottky diodes using ultraviolet laser drilling and Cu electroplating, where the temperature increase was suppressed by approximately 21% at the power density of 5.7 W mm −3 .
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
Advanced Package Process Development Team, Samsung Electronics, Suwon 16677, Republic of Korea
School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Funding
Ministry of Trade, Industry and Energy · Defense Acquisition Program Administration
References (25)
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