Combining GeO ₂ passivation strategies aiming at dielectric layers with superior properties on germanium substrates

Louise Patron Etcheverry; Henri Ivanov Boudinov; Gabriel Vieira Soares; Cláudio Radtke

doi:10.1039/c9tc01831j

journal article·2019

Combining GeO ₂ passivation strategies aiming at dielectric layers with superior properties on germanium substrates

Louise Patron Etcheverry, Henri Ivanov Boudinov, Gabriel Vieira Soares, Cláudio Radtke

Journal of Materials Chemistry C· Volume 7· Issue 27

Publisher page

Source abstract

Abstract

Hf and N incorporation in GeO ₂ suppresses its volatilization and further oxidation of the Ge substrate.

Only a short abstract or summary was supplied by the source.

Source: crossref · Quality: short

Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

PGMicro

UFRGS

91509-900 Porto Alegre

Brazil

Instituto de Física

Instituto de Química

Funding

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior · Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul · Ministério da Ciência, Tecnologia, Inovações e Comunicações · Conselho Nacional de Desenvolvimento Científico e Tecnológico

References (17)

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