The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge 2 Sb 2 Te 5 phase change material
Source abstract
Abstract
The investigation of the chemical effect of slurry pH on the CMP process of a C-GST film through electrochemical means reveals a conversion of polishing behavior from the cycling to mechanical mechanism as the pH level varies.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
University of Chinese Academy of Sciences, Beijing, 100049, China
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Chinese Academy of Sciences
References (44)
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