Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition
Source abstract
Abstract
To improve the water-resistance of MgO-based metal–insulator–metal capacitors, BeO/MgO/BeO/MgO/BeO stacked layers were deposited by atomic layer deposition using bis(cyclopentadienyl)magnesium and diethyl beryllium and O 3 as an oxygen source.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Magnesium Oxide Properties and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
Funding
National Research Foundation of Korea
References (41)
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