Controlled roughness reduction of patterned resist polymers using laser-induced sub-millisecond heating
Source abstract
Abstract
High resolution resist polymers are critical for nanometer-scale lithography. Annealing developed polymer patterns with laser-induced heating at temperatures up to 450 °C for 500 μs minimizes surface energy and reduces pattern roughness.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Advancements in Photolithography Techniques · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering
Cornell University
Ithaca, USA
Funding
Intel Corporation
References (25)
Show source-provided references
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