A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range
Source abstract
Abstract
A highly ordered microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. Doping in the structure significantly modifies the reflection behavior in the mid-infrared region.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Photonic and Optical Devices · Optical Coatings and Gratings · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
Singapore Institute of Manufacturing Technology (SIMTech), A*STAR, 2 Fusionopolis Way, #08-04, Innovis, 138634, Singapore
Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery and Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon 34103, South Korea
Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 138602, Singapore
Funding
National Research Foundation Singapore · Agency for Science, Technology and Research · Nanyang Technological University
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