Tuning electronic properties in LaNiO 3 thin films by B-site Cu-substitution
Source abstract
Abstract
Cu-Substitution in LaNiO 3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry
Centre for Materials Science and Nanotechnology
University of Oslo
Blindern
Norway
Argonne National Laboratory
Lemont
USA
Funding
Argonne National Laboratory · Norges Forskningsråd
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