Structure and electrical properties of Ga 2 O 3 thin films grown by atomic layer deposition on Ru and TiN electrodes
Source abstract
Abstract
The composition, structure, and electrical properties of Ga 2 O 3 thin films, grown by atomic layer deposition (ALD) from GaI 3 and O 3 precursors, were characterized.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Wallenberg Initiative Material Science for Sustainability, Thin Films Physics Division, Department of Physics (IFM), Linköping University, SE 581 83 Linköping, Sweden
Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, 84 Gungjuan Rd., Taishan Dist., New Taipei City 24301, Taiwan
Funding
Eesti Teadusagentuur
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