Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO 2 on MoN x electrodes for improved TiO 2 capacitor performance
Source abstract
Abstract
Oxygen-scavenging MoN x converts ALD MoO x into metastable monoclinic MoO 2 , enabling high-k rutile TiO 2 -based capacitors with low leakage and ultralow EOT.
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Research context
OpenAlex topics: Semiconductor materials and devices · Supercapacitor Materials and Fabrication · Advancements in Battery Materials
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Affiliations
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy · Ministry of Science and ICT, South Korea
References (32)
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