DataVXJournal of Materials Chemistry CPaper
article·2025-01-01

An ion-gating synaptic memristor based on tri-layer HfO x composition regulation

Lanqing Zou, Jun Zhang, Yunhui Yi, Jiawang Ren, Huajun Sun, Chuqian Zhu, Jiyang Xu, Sheng Hu, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao

Journal of Materials Chemistry C
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Source abstract

Abstract

This study developed tri-layer HfO x /HfO 2 /HfO x memristors with an ion-gating HfO 2 interlayer, enabling precise control over conductive filaments and achieving high consistency and linearity.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function

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