Revealing the TMA 2 SnI 4 /GaN band alignment and carrier transfer across the interface
Source abstract
Abstract
The type II band alignment was found at the TMA 2 SnI 4 /GaN interface, with conduction and valence band offsets of 0.2 eV and 1.5 eV, respectively.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, Wrocław 50-370, Poland
Saule Research Institute, Duńska 11, Wrocław 54-427, Poland
Saule Technologies, Duńska 11, Wrocław 54-427, Poland
Łukasiewicz Research Network PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, Warszawa 01-142, Poland
Funding
Narodowe Centrum Nauki · Fundacja na rzecz Nauki Polskiej
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