High-quality SiN x thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma
Source abstract
Abstract
A novel remote high-density plasma source, hollow cathode plasma source allows low-temperature growth of high-quality SiN x films without oxygen impurities, showing superior physicochemical and electrical properties.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications
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Affiliations
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea
Revolutionary Technology Center, SK Hynix, Icheon 17336, Republic of Korea
Foundry Business, Samsung Electronics, Hwasung 18448, Republic of Korea
Advanced Materials Research Team, Hyundai Motor Company, Uiwang 16082, Republic of Korea
Funding
Ministry of Trade, Industry and Energy · Samsung
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