Enhanced pseudo-atomic layer deposition of antimony telluride thin films by co-injecting NH 3 gas with both precursors
Source abstract
Abstract
This work proposed an enhanced deposition method of antimony telluride (Sb 2 Te 3 ) thin films, which allowed facile growth at high temperatures (> 150 °C).
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
Funding
National Research Foundation of Korea
References (31)
Show source-provided references
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