Manipulation of electrical performance in Al-based Josephson junctions via oxygen vacancies in barrier
Source abstract
Abstract
Here, we reveal that the electronic structures and transport properties of Al/AlO X /Al JJs are highly dependent on the positions of OVs in the barrier by developing JJ models incorporating different positions, distributions, and numbers of OVs.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Surface and Thin Film Phenomena · Semiconductor materials and devices · Semiconductor materials and interfaces
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References
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